K9F1G08U0E-SIB0 Samsung

K9F1G08U0E-SIB0 , K9F1G08U0E SIB0 , K9F1G08U0ESIB0

Speicher von Samsung
Technische Details :K9F1G08U0E-SIB0
Voltage Supply 3.3V Device (K9F1G08U0E) : 2.7V-3.6V
Organization K9F1G08U0E-SIB0
Memory Cell Array: (128M + 4M) x 8bit
Data Register: (2K + 64) x 8bit
Automatic Program and Erase
Page Program: (2K + 64) Byte
Block Erase: (128K + 4K) Byte
Page Read Operation
Page Size: (2K + 64) Byte
Random Read: 40µs (Max.)
Serial Access: 25ns (Min.)
Fast Write Cycle Time
Page Program time: 400µs (Typ.)
Block Erase Time: 4.5ms (Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection:
Program/Erase Lockout During Power Transitions K9F1G08U0E-SIB0
Reliable CMOS Floating-Gate Technology
ECC requirement: 1 bit / 528bytes
Command Driven Operation
Unique ID for Copyright Protection
Gehäuse: 48 Pin TSOP (12 x 20 / 0.5 mm pitch)

Brand Name: K9F1G08U0E-SIB0:

Pb-FREE
Abmesssung (9 x 11 / 0.8 mm pitch)

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